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november 2015 docid027154 rev 2 1 / 13 this i s information on a product in full production. www.st.com STP110N8F7 n - channel 80 v, 6.4 m typ., 80 a, stripfet? f7 power mosfet in a to - 220 package datasheet - production data figure 1 : internal schematic diagram features order code v ds r ds(on)max i d p tot STP110N8F7 80 v 7.5 m? 80 a 170 w ? among the lowest r ds(on) on the market ? excellent figure of merit (fom) ? low c rss /c iss ratio for emi immunity ? high avalanche ruggedness applications ? switching applications description this n - channel power mosfet utilizes stripfet? f7 techn ology with an enhanced trench gate structure that results in very low on - state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. table 1: device summary order code marking package packaging STP110N8F7 110n8f7 to - 220 tube
contents STP110N8F7 2 / 13 docid027154 rev 2 contents 1 electrical ratings ................................ ................................ ............. 3 2 electrical characteristics ................................ ................................ 4 2.1 electrical characteristics (curves) ................................ ...................... 6 3 test circuits ................................ ................................ ..................... 8 4 package mechanical data ................................ ............................... 9 4.1 to - 220 package mechanical data ................................ .................. 10 5 revision history ................................ ................................ ............ 12
STP110N8F7 electrical ratings docid027154 rev 2 3 / 13 1 electrical ratings table 2: absolute maximum ratings symbol parameter value unit v ds drain - source voltage 80 v v gs ga te - source voltage 20 v i d drain current (continuous) at t c = 25 c 80 (1) a i d drain current (continuous) at t c = 100 c 76 a i dm (2) drain current (pulsed) 320 a p tot total dissipatio n at t c = 25 c 170 w e as (3) single pulse avalanche energy 220 mj t j operating junction temperature - 55 to 175 c t stg storage temperature c notes: (1) limited by package (2) pulse width is limited by safe operating a rea (3) starting t j = 25c, i d = 25 a, v dd = 40 v table 3: thermal data symbol parameter value unit r thj - case thermal resistance junction - case max 0.88 c/w r thj - amb thermal resistance junction - ambient max 62.5 c/w
electrical chara cteristics STP110N8F7 4 / 13 docid027154 rev 2 2 electrical characteristics (t c = 25 c unless otherwise specified) table 4: on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain - source breakdown voltage v gs = 0, i d = 250 a 80 v i dss zero gate voltage drain current v gs = 0, v ds = 80 v 1 a v gs = 0, v ds = 80 v, t c = 125 c 10 a i gss gate - body leakage current v ds = 0, v gs = 20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2.5 4 .5 v r ds(on) static drain - source on - resistance v gs = 10 v, i d = 40 a 6.4 7.5 m? table 5: dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v gs = 0, v ds = 40 v, f = 1 mhz - 3435 - pf c oss output capacitance - 653 - pf c rss reverse transfer capacitance - 57 - pf q g total gate charge v dd = 40 v, i d = 80 a, v gs = 10 v (see figure 14: "test circuit for gate charge behavior" ) - 46.8 - nc q gs gate - source charge - 23.4 - nc q gd gate - drain charge - 11.2 - nc table 6: switching times symbol parameter test condit ions min. typ. max. unit t d(on) turn - on delay time v dd = 40 v, i d = 40 a, r g = 4.7 ?, v gs = 10 v (see figure 13: "test circuit for resistive load switching times" and figure 18: "switching time waveform" ) - 49 - ns t r rise time - 95 - ns t d(off) turn - off delay t ime - 60 - ns t f fall time - 32 - ns
STP110N8F7 electrical characteristics docid027154 rev 2 5 / 13 table 7: source drain diode symbol parameter test conditions min. typ. max. unit v sd (1) forward on voltage v gs = 0, i sd = 80 a - 1.2 v t rr reverse recovery time i sd = 80 a, di/d t = 100 a/s v dd = 60 v (see figure 15: "test circuit for inductive load switching and diode recovery times" ) - 48.6 ns q rr reverse recovery charge - 58.6 nc i rrm reverse recovery current - 2.4 a notes: (1) pulsed: pulse duration = 300 s, duty cycle 1.5%
electrical characteristics STP110N8F7 6 / 13 docid027154 rev 2 2.2 electrical characteristics (curves) figure 2 : safe operating area figure 3 : thermal impedance figure 4 : output characteristics figure 5 : transfer characteristics figure 6 : gate charge vs gate - source voltage figure 7 : static drain - source on - resistance
STP110N8F7 electrical characteristics docid027154 rev 2 7 / 13 figure 8 : capacitance variations figure 9 : normalized gate threshold voltage vs temperature figure 10 : normalized on - re sistance vs temperature figure 11 : normalized v (br)dss vs temperature figure 12 : source - drain diode forward characteristics
test circuits STP110N8F7 8 / 13 docid027154 rev 2 3 test circuits figure 13 : test circuit for resistive load switching times figure 14 : test circuit for gate charge behavior figure 15 : test circuit for i nductive load switching and diode recovery times figure 16 : unclam ped inductive load test circuit figure 17 : unclamped inductive waveform figure 18 : switching time waveform
STP110N8F7 package mechanical data docid027154 rev 2 9 / 13 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their le vel of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack ? is an st trademark.
package mechanical data STP110N8F7 10 / 13 docid027154 rev 2 4.1 to - 220 package mechanical data figure 19 : to - 220 type a package outline
STP110N8F7 package mechanical data docid027154 rev 2 11 / 13 table 8: to - 220 type a mechanical data dim. mm min. typ. max. a 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 d 15.25 15.75 d1 1.27 e 10 10.40 e 2.40 2.70 e1 4.95 5.15 f 1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l 13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ?p 3.75 3.85 q 2.65 2.95
revision history STP110N8F7 12 / 13 docid027154 rev 2 5 revision history table 9: doc ument revision history date revision changes 10 - nov - 2014 1 initial release. 04 - nov - 2015 2 datasheet promoted from target to production data. modified: table 2: "absolute maximum ratings" , table 5: "dynamic" , table 6: "switching times" and table 7: "source drain diode" added: section 4.1: "electrica l characteristics (curves)" minor text changes.
STP110N8F7 docid027154 rev 2 13 / 13 important notice C please read carefully stmicroelectronics nv and its subsidiaries (st) reserve the right to make chan ges, corrections, enhancements, modifications, and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant information on st products before placing orders. st products are sold pursuant to sts terms and conditions of sale in place at the time of order acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and st assumes no liability for applicati on assistance or the design of purchasers p roducts. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information set forth herein shall void any warranty granted by st f or such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2015 stmicr oelectronics C all rights reserved

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